15n10 1 / 8 may,2015-rev.00 www.dyelec.com 1. gate 2. drain 3. source pin definition: product summary v ds (v) r ds(on) (m?) i d (a) 100 110@ v gs =10v 15 100v n-channel power mosfet absolute maximum ratings (t c =25c, unless otherwise specified) r ds(on) <110m? @ v gs =10v advanced high cell density trench technology super low gate charge excellent cdv/dt effect decline lead free in compliance with eu rohs directive. green molding compound ordering information case: to-252 part no. package packing dmd15n10-tr to-252 2.5kpcs / 13 reel block diagram d g s thermal data DMD15N10-TU to-252 75pcs / tube parameter symbol ratings unit drain-source voltage v ds 100 v gate-source voltage v gs 20 v continuous drain current 1 i d @t c =25 15.0 a continuous drain current 1 i d @t c =70 13.8 a pulsed drain current 2 i dm 24 a total power dissipation 4 p d @t c =25 34.7 w total power dissipation p d @t a =25 2 w single pulse avalanche energy 3 eas 8 mj avalanche current i as 11 a operating junction and storage temperature range tj, tstg -55 ~ +150 parameter symbol max. value unit thermal resistance junction-ambient 1 r ja 62.5 / w thermal resistance junction-case 1 r jc 3.6 /w
2 / 8 15n10 100v n-channel power mosfet may.2015-rev.00 www.dyelec.com electrical characteristics (tj = 25 unless otherwise specified) parameter symbol min. typ. max. unit test conditions drain-source breakdown voltage bv dss 100 - - v v gs =0, i d =250ua gate threshold voltage v gs(th) 1.0 - 2.5 v v ds = v g s , i d =250ua gate-source leakage current i gss - - 100 na v gs = 20v drain-source leakage current i dss - - 1.0 ua v ds =80 v, v gs =0 - - 110 v gs =10v, i d =8a static drain-source on-resistance 2 r ds(on) - - 120 m ? v gs =4. 5v, i d =8a total gate charge 2 q g 26.2 gate-source charge q gs 4.6 gate-drain (miller) change q gd 5.1 nc i d =10a v ds =80v v gs =10v turn-on delay time 2 t d(on) - 4.2 - rise time t r - 8.2 - turn-off delay time t d(off) - 35. 6 - fall time t f - 9.6 - ns v ds =50v i d =10a v gs =10v r g =3.3 ? input capacitance c iss - 153 5 - output capacitance c oss - 60 - reverse transfer capacitance c rss - 37 - pf v gs =0v v ds =15v f=1.0 mhz gate resistance r g - 2 - f=1 .0mhz guaranteed avalanche characteristics parameter symbol min. typ. max. unit test conditions single pulse avalanche energy 5 eas 1.25 - - mj v dd =25v, l=0.1mh, i as =5a source-drain diode parameter symbol min. typ. max. unit test conditions continuous source current 1,6 i s - - 1 5 a pulsed source current 2,6 i sm - - 2 4 a v g =v d =0v, force current forward on voltage 2 v sd - - 1 .2 v v gs =0v, i s =8a , t j =25 reverse recovery time t rr - 37 - ns reverse recovery charge q rr - 27. 3 - nc i f =10a, di/dt=100a/ s, t j =25 notes: 1. the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper, Q 10sec , 125 /w at steady state. 2. the data tested by pulsed, pulse width Q 300us, duty cycle Q 2%. 3. the eas data shows max. rating. the test condition is vdd=25v, vgs=10v, l=0.1mh, ias=11a. 4. the power dissipation is limited by 150 junction temperature. 5. the min. value is 100% eas tested guarantee. 6. the data is theoretically the same as id and idm, in real applications, should be limited by total power dissipation.
3 / 8 test circ uits and waveforms 15n10 100v n-channel power mosfet same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * sd controlled by pulse period * d.u.t.-de vice under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms may,2015-rev.00 www.dyelec.com
4 / 8 test circuits and waveforms(cont.) 15n10 100v n-channel power mosfet switching test circuit switching waveforms gate charge test circuit gate charge waveform v dd bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit t p time unclamped inductive switching waveforms may,2015-rev.00 www.dyelec.com
5 / 8 typical characteristics 15n10 100v n-channel power mosfet may,2015-rev.00 www.dyelec.com fig.1 typical output characteristics fig.2 on-resistance vs. g-s voltage fig.3 normalized v gs(th) vs. t j fig.4 normalized r dson vs. t j fig.5 safe operating area fig.6 forward characteristics of reverse
15n10 100v n-channel power mosfet typical characteristics(cont.) 6 / 8 may,2015-rev.00 www.dyelec.com fig.7 gate charge characteristics fig.8 capacitance characteristic fig.9 normalized maximum transient thermal impedance fig.10 switching time waveform fig.11 gate charge waveform
7 / 8 to-252 mechanical drawing 15n10 100v n-channel power mosfet may,2015-rev.00 www.dyelec.com millimeter ref. min. max. a 6.40 6.80 b 5.13 5.53 c 6.80 7.25 d 2.90 3.30 e 2.39 g 0.45 0.85 h 2.20 2.40 j 0.41 0.61 k 0 0.15 l 1.40 1.85 m 5.90 6.30 r 0.60 1.20 2.19
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